Product Summary

MJE253G - Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS - ON Semiconductor

Parametrics

Maximum ratings :
Collector-Emitter voltage Vceo : 100Vdc
Collector-Base Voltage Vcb :100Vdc
Emitter-base Voltage Veb :7.0Vdc
Collector Current-continuous Ic :4.0 Adc
Collector Current-Peak :8.0Adc
Base Current Ib : 10Adc
Total power dissipation@Tc=25℃ Pd :15W
Derate above 25℃ Pd :0.12 mW/℃
Total Power dissipation @ Tc=25℃ Pd :1.5W
Derate above 25℃ Pd :0.012mW/℃
Operating and storage Junction Temperature Range Tj,Tatg :-65to+150℃

Features

Features as below :
(1) High Collector-Emitter Sustaining Voltage -VCEO(sus) = 100 Vdc (Min);
(2) High DC Current Gain @ IC = 200 mAdc hFE = 40-200= 40-120; (3) Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc;
(4) High Current Gain Bandwidth Product -fT = 40 MHz (Min) @ IC = 100 mAdc;
(5) Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB;
(6) Pb-Free Packages are Available

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE253G
MJE253G
ON Semiconductor
Transistors Bipolar (BJT) 4A 100V 15W PNP
Data Sheet
0-1: $0.32
1-25: $0.26
25-100: $0.20
100-500: $0.17
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE200G
MJE200G
ON Semiconductor
Transistors Bipolar (BJT) 5A 25V 15W NPN
Data Sheet
0-1: $0.32
1-25: $0.25
25-100: $0.21
100-500: $0.18
MJE210
MJE210
ON Semiconductor
Transistors Bipolar (BJT) 5A 25V 15W PNP
Data Sheet
Negotiable 
MJE210G
MJE210G
ON Semiconductor
Transistors Bipolar (BJT) 5A 25V 15W PNP
Data Sheet
0-1: $0.29
1-25: $0.25
25-100: $0.18
100-500: $0.15
MJE210T
MJE210T
ON Semiconductor
Transistors Bipolar (BJT) 5A 25V 15W PNP
Data Sheet
Negotiable 
MJE2360T
MJE2360T
Other

Data Sheet
Negotiable 
MJE2361T
MJE2361T
Other

Data Sheet
Negotiable