Product Summary

The APT30M85BVRG is a new generation of high voltage N-Channel enhancement mode power MOSFET. The minimizes the JFET effect, increases packing density and reduces the on-resistance. And the APT30M85BVRG also achieves faster switching speeds through optimized gate layout.

Parametrics

APT30M85BVRG maximum ratings: (1) Drain-Source Voltage VDDS: 300V; (2) Continuous Drain Current@ TC=25°C, ID: 40A; (3) Pulsed Drain Current IDM: 160A; (4) Gate-Source Voltage Continuous VGS: ±30V; (5) Gate-Source Voltage Transient VGSM: ±40V; (6) Total Power Dissipation@Tc=25°C, PD: 300W, Linear Derating Factor: 2.4W/°C; (7) Operating and Storage Junction Temperature Range: -55 to 150°C; (8) Lead Temperature: 0.063 inch from Case for 10 Sec TL: 300°C; (9) Avalanche Current (Repetitive and Non-Repetitive) IAR: 40A; (10) Repetitive Avalanche Energy EAR: 30mJ; (11) Single Pulse Avalanche Energy EAS: 1300mJ.

Features

APT30M85BVRG features: (1) Faster Switching; (2) 100% Avalanche Tested; (3) Lower Leakage; (4) Popular TO-247 Package.

Diagrams

APT30M85BVRG Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT30M85BVRG
APT30M85BVRG

MOSFET N-CH 300V 40A TO-247
Data Sheet
0-30: $5.61
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT30D100B
APT30D100B
Other

Data Sheet
Negotiable 
APT30D100BCA
APT30D100BCA
Other

Data Sheet
Negotiable 
APT30D100BCAG
APT30D100BCAG

DIODE ULT FAST 2X18A 1000V TO247
Data Sheet
Negotiable 
APT30D100BG
APT30D100BG

DIODE ULT FAST 30A 1000V TO-247
Data Sheet
0-1: $2.66
1-10: $2.38
10-100: $1.95
100-250: $1.76
250-500: $1.58
500-1000: $1.33
1000-2500: $1.27
2500-5000: $1.21
5000-10000: $1.18
APT30D100SG
APT30D100SG

DIODE ULT FAST 30A 1000V D3PAK
Data Sheet
0-60: $2.54
APT30D120BG
APT30D120BG

DIODE ULT FAST 30A 1200V TO-247
Data Sheet
0-1: $3.20
1-10: $2.86
10-100: $2.34
100-250: $2.12
250-500: $1.90
500-1000: $1.60
1000-2500: $1.52
2500-5000: $1.46
5000-10000: $1.42