(China (Mainland))
Product Summary
The APT30M85BVRG is a new generation of high voltage N-Channel enhancement mode power MOSFET. The minimizes the JFET effect, increases packing density and reduces the on-resistance. And the APT30M85BVRG also achieves faster switching speeds through optimized gate layout.
Parametrics
APT30M85BVRG maximum ratings: (1) Drain-Source Voltage VDDS: 300V; (2) Continuous Drain Current@ TC=25°C, ID: 40A; (3) Pulsed Drain Current IDM: 160A; (4) Gate-Source Voltage Continuous VGS: ±30V; (5) Gate-Source Voltage Transient VGSM: ±40V; (6) Total Power Dissipation@Tc=25°C, PD: 300W, Linear Derating Factor: 2.4W/°C; (7) Operating and Storage Junction Temperature Range: -55 to 150°C; (8) Lead Temperature: 0.063 inch from Case for 10 Sec TL: 300°C; (9) Avalanche Current (Repetitive and Non-Repetitive) IAR: 40A; (10) Repetitive Avalanche Energy EAR: 30mJ; (11) Single Pulse Avalanche Energy EAS: 1300mJ.
Features
APT30M85BVRG features: (1) Faster Switching; (2) 100% Avalanche Tested; (3) Lower Leakage; (4) Popular TO-247 Package.
Diagrams
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MOSFET N-CH 300V 40A TO-247 |
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APT30D100B |
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Negotiable |
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APT30D100BCA |
Other |
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Data Sheet |
Negotiable |
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APT30D100BCAG |
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DIODE ULT FAST 2X18A 1000V TO247 |
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Negotiable |
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APT30D100BCT |
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Negotiable |
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APT30D100BCTG |
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DIODE ULT FAST 2X30A 1000V TO247 |
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APT30D100BG |
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DIODE ULT FAST 30A 1000V TO-247 |
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