(China (Mainland))
Product Summary
The H5TQ1G63BFR-12C is a 1Gb DDR3 SDRAM. It is ideally suited for the main memory applications which requires large memory density and high bandwidth. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
Parametrics
H5TQ1G63BFR-12C absolute maximum ratings: (1)Voltage on VDD pin relative to VSS: -0.4 to 1.975V; (2)voltage on VDDQ pin relative to VSS: -0.4 to 1.975V; (3)voltage on any pin relative to VSS: -0.4 to 1.975V; (4)storage temperature: -55 to 100℃.
Features
H5TQ1G63BFR-12C features: (1)Driver strength selected by EMRS; (2)Dynamic On Die Termination supported; (3)Asynchronous RESET pin supported; (4)ZQ calibration supported; (5)TDQS (Termination Data Strobe) supported (x8 only); (6)Write Levelization supported; (7)8 bit pre-fetch.
Diagrams
