(China (Mainland))
Product Summary
Description: These are N-Channel enhancement mode silicon gate power field
effect transistors, They are advanced power MOSFETs designed,tested, and guaranteed
to withstand a specified level of energy in the breakdown avalance mode of operation.
All of these poer MOSFETs are designed for applications such as switching regulators.
switching converters,motor drivers ,relay driversm and drivers for high power bipolar
switching transistors requiring high speed and low gate drive power, These types can be
operated directly from integrated circuits.
Parametrics
Absolute Maximum Ratings
Drain to Source Voltage ................................Vdss 55V
Features
Feature
(1)100A(Note1),55V;
(2)Low On-Resistance,rDS(ON)=0.008Ω;
(3)Temperature Compensating PSPICE Model;
(4)Thermal impedance SPICE Model;
(5)UIS Rating Curve;
(6)Related Literature
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 HRF3205_Q |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
||||
 |
HRF3205S |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
HRF3205 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
||||
