Product Summary

TOSHIBA is continually working to improve the quality and reliability of its products.Nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.it is the responsibility of the buyer,when utilizing TOSHIBA products,to observe standards of safety,and to avoid situation to property.In developing your designs,please ensure that TOSHIBA products are used within specified operating
ranges as set forth in the most recent products specification.Also,please keep in mind the precautions and conditions set forth in the TOSHIBA semiconductor reliability Handbook.

Parametrics

parametrics:High speed:tf=0.3us(Max)@Inductive Load.Low Saturation Voltage:VDE(sat)=3.6V(Max).

Features

Features:1.High input impedance,2.Enhancament Mode,3.Includes a Complete Half Bridge in one package.4.the electrodes are Isolated from case.

Diagrams

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MG600J2YS60A
MG600J2YS60A

Other


Data Sheet

Negotiable 
MG600J2YS61A
MG600J2YS61A


IGBT MOD CMPCT DUAL 600V 600A

Data Sheet

Negotiable 
MG600Q1US61
MG600Q1US61

Other


Data Sheet

Negotiable 
MG600Q2YS60A
MG600Q2YS60A


IGBT MOD CMPCT 1200V 600A

Data Sheet

Negotiable