Product Summary
DESCRIPTION:The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal
layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products
Parametrics
ABSOLUTE MAXIMUM RATING
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 11 11 ( *) A
ID Drain Current (continuous) at TC = 100°C 7 7 (*) A
IDM ( ) Drain Current (pulsed) 44 44 (*) A
PTOT Total Dissipation at TC = 25°C 160 35 W
Derating Factor 1.28 0.28 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
VISO Insulation Winthstand Voltage (DC) -- 2500 V
Tstg Storage Temperature –65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C
Features
(1) TYPICAL RDS(on) = 0.4Ω;
(2) HIGH dv/dt AND AVALANCHE CAPABILITIES;
(3) 100% AVALANCHE TESTED;
(4) LOW INPUT CAPACITANCE AND GATECHARGE;
(5) LOW GATE INPUT RESISTANCE
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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STP11NM60FP |
STMicroelectronics |
MOSFET N-Ch 600 Volt 11 Amp |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
STP100NF03L-03 |
STMicroelectronics |
MOSFET TO-220 N-CH 30V 100A |
Data Sheet |
Negotiable |
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STP100NF04 |
STMicroelectronics |
MOSFET N-Ch 40 Volt 120 Amp |
Data Sheet |
|
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STP100NF04L |
Other |
Data Sheet |
Negotiable |
|
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STP10N62K3 |
STMicroelectronics |
MOSFET N-channel 620 V 8.4 A TO-220 TO-22 |
Data Sheet |
|
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STP10N65K3 |
STMicroelectronics |
MOSFET N-Ch Power Mosfet TO 220AB Trans |
Data Sheet |
|
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STP10NA40 |
Other |
Data Sheet |
Negotiable |
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