Product Summary
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8?lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FE
Parametrics
Forward current :IF 20 mA
Forward current derating (Ta ≥ 70°C) △IF / △Ta -0.36 mA / °C
Peak transient forward curent: IFPT 1 A
Reverse voltage :VR 5 V
Junction temperature :Tj 125 °C
Operating frequency : f 25 kHz
Operating temperature range : Topr -20~85 °C
Storage temperature range :Tstg -55~125 °C
Lead soldering temperature (10 s): Tsol 260 °C
Features
? Input threshold current: IF=5mA(max.)
? Supply current (ICC): 11mA(max.)
? Supply voltage (VCC): 10-35V
? Output current (IO): ±1.5A (max.)
? Switching time (tpLH/tpHL): 1.5μs(max.)
? Isolation voltage: 2500Vrms(min.)
? UL recognized: UL1577, file No.E67349
? Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 4000VPK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)"
? Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)