Product Summary

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a 
integrated photodetector. 
This unit is 8?lead DIP package. 
TLP250 is suitable for gate driving circuit of IGBT or power MOS FE

Parametrics

Forward current :IF 20 mA 
Forward current derating (Ta ≥ 70°C)  △IF / △Ta  -0.36 mA / °C 
Peak transient forward curent: IFPT 1 A 
Reverse voltage :VR 5 V 
Junction temperature :Tj 125 °C
Operating frequency : f 25 kHz 
Operating temperature range : Topr -20~85 °C 
Storage temperature range :Tstg -55~125 °C 
Lead soldering temperature (10 s): Tsol 260 °C

Features

? Input threshold current: IF=5mA(max.) 
? Supply current (ICC): 11mA(max.) 
? Supply voltage (VCC): 10-35V 
? Output current (IO): ±1.5A (max.) 
? Switching time (tpLH/tpHL): 1.5μs(max.) 
? Isolation voltage: 2500Vrms(min.) 
? UL recognized: UL1577, file No.E67349 
? Option (D4) type 
 VDE approved: DIN VDE0884/06.92,certificate No.76823 
 Maximum operating insulation voltage: 630VPK
 Highest permissible over voltage: 4000VPK
(Note) When a VDE0884 approved type is needed, 
please designate the "option (D4)"
? Creepage distance: 6.4mm(min.) 
 Clearance: 6.4mm(min.)