(China (Mainland))
Product Summary
DESCRIPTION:The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications
Parametrics
ABSOLUTE MAXIMUM RATINGS (TA = 25 ℃)
Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (pulse)* ID(pulse) ±20 A
Total Power Dissipation (Tc = 25 ℃) PT1 35 W
Total Power Dissipation (TA = 25 ℃) PT2 2.0 W
Channel Temperature Tch 150 ℃
Storage Temperature Tstg –55 to +150 ℃
Single Avalanche Current** IAS 5.0 A
Single Avalanche Energy** EAS 8.3 mJ
* PW ≤ 10 μs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ℃, RG = 25Ω, VGS = 20 V → 0
Features
FEATURES as below :
(1) Low On-Resistance RDS(on) = 1.5Ω MAX. (VGS = 10 V, ID = 2.5 A);
(2) Low Ciss, Ciss = 930 pF TYP.;
(3) High Avalanche Capability Ratings;
(4) Isolate TO-220 (MP-45F) Package
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK2139 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SK2002-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2003-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2007 |
Other |
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Data Sheet |
Negotiable |
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2SK2008 |
Other |
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Data Sheet |
Negotiable |
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2SK2009 |
Other |
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Data Sheet |
Negotiable |
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2SK2010 |
Other |
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Data Sheet |
Negotiable |
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