(China (Mainland))
Product Summary
MJE243G - Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS - ON Semiconductor
Parametrics
Maximum ratings :
Collector-Emitter voltage Vceo : 100Vdc
Collector-Base Voltage Vcb :100Vdc
Emitter-base Voltage Veb :7.0Vdc
Collector Current-continuous Ic :4.0 Adc
Collector Current-Peak :8.0Adc
Base Current Ib : 10Adc
Total power dissipation@Tc=25℃ Pd :15W
Derate above 25℃ Pd :0.12 mW/℃
Total Power dissipation @ Tc=25℃ Pd :1.5W
Derate above 25℃ Pd :0.012mW/℃
Operating and storage Junction Temperature Range Tj,Tatg :-65to+150℃
Features
Features as below :
(1) High Collector-Emitter Sustaining Voltage -VCEO(sus) = 100 Vdc (Min);
(2) High DC Current Gain @ IC = 200 mAdc hFE = 40-200= 40-120;
(3) Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc;
(4) High Current Gain Bandwidth Product -fT = 40 MHz (Min) @ IC = 100 mAdc;
(5) Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB;
(6) Pb-Free Packages are Available
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MJE243G |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 100V 15W NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJE200 |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W NPN |
Data Sheet |
Negotiable |
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MJE200G |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W NPN |
Data Sheet |
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MJE200STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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MJE210 |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W PNP |
Data Sheet |
Negotiable |
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MJE210G |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 25V 15W PNP |
Data Sheet |
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MJE210STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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