Product Summary

High Efficiency DC-DC Converter Applications 
Notebook PC Applications 
Portable Equipment Applications

Parametrics

Absolute Maximum Ratings (Ta = 25°C)
Drain-source voltage  VDSS 30 V 
Drain-gate voltage (RGS = 20 kΩ)  VDGR 30 V 
Gate-source voltage  VGSS ±20 V 
Drain current DC (Note 1) ID 8 A 
Drain current Pulsed (Note 1) IDP 32 A 
Drain power dissipation (t = 10 s)  (Note 2a) PD 1.9 W 
Drain power dissipation  (t = 10 s)  (Note 2b) PD 1.0 W 
Single pulse avalanche energy (Note 3) EAS 42 mJ 
Avalanche current  IAR 8 A 
Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.21 mJ 
Channel temperature  Tch 150 °C 
Storage temperature range  Tstg -55 to 150 °C

Features

 Small footprint due to a small and thin package 
? High-speed switching 
? Small gate charge: QSW = 3.5 nC (typ.) 
? Low drain-source ON-resistance:  RDS (ON) = 21 mΩ (typ.) (VGS = 4.5 V) 
? Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) 
? Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA