Product Summary
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Parametrics
Absolute Maximum Ratings (Ta = 25°C)
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID 8 A
Drain current Pulsed (Note 1) IDP 32 A
Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W
Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W
Single pulse avalanche energy (Note 3) EAS 42 mJ
Avalanche current IAR 8 A
Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.21 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Features
Small footprint due to a small and thin package
? High-speed switching
? Small gate charge: QSW = 3.5 nC (typ.)
? Low drain-source ON-resistance: RDS (ON) = 21 mΩ (typ.) (VGS = 4.5 V)
? Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
? Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA