Product Summary
The 2SC5386 is a transistor silicon NPN triple diffused mesa type. And applications of the 2SC5386 include: high resolution display, color TV and high speed switching.
Parametrics
2SC5386 absolute maximum ratings: (1) collector-base voltage, VCBO: 1500V; (2) collector-emitter voltage, VCEO: 600V; (3) emitter-base voltage VEBO: 5V; (4) collector current DC IC: 8A, Pulse ICP: 16A; (5) base current IB: 4A; (6) collector power dissipation (TC=25°C) PC=50W; (7) Junction Temperature Tj: 150°C; (8) Storage Temperature Tstg: -55 to 150°C.
Features
2SC5386 features: high voltage VCBO=1500V; (2) Low Saturation VCE(sat) =3V (Max.) ; (3) High speed tf: 0.15uS (Typ.) ; (4) Colletor metal (fin) is fully covered with mold resin.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2SC5386 |
Other |
Data Sheet |
Negotiable |
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2SC5000 |
Other |
Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
Data Sheet |
Negotiable |
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2SC5003 |
Other |
Data Sheet |
Negotiable |
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2SC5004 |
Other |
Data Sheet |
Negotiable |
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