(China (Mainland))
Product Summary
The 2SK2545 is a TOSHIBA is a filed effect transistor silicon and channel mos. Applications of the include: high speed, high voltage switching and DC-DC converter, relay driver and motor drive.
Parametrics
2SK2545 maximum ratings: (1) Drain-Source Voltage VDSS: 600V; (2) Drain-Gate Voltage (RGS=20KΩ) VGR: 600V; (3) Gate-Source Voltage VGSS: ±30V; (4) Drain Current, ID: 6A, IDP: 24A; (5) Drain power dissipation (Tc=25°C) PD: 40W; (6) Avalanche current IAR: 6A; (7) Repetitive Avalance energy EAR: 4mJ; (8) Channel Temperature: 150°C; (9) Storage Temperature Tstg: -55°C to 150°C.
Features
2SK2545 features:(1) Low Drain-Source ON Resistance :RDS (ON)=0.9Ω(Typ) ; (2) High Froward Transfer Admittance: 5.5S (Typ.) ; (3) Low Leakage Current: IDSS=100uA(Max.) (VDS=600V) ; (4) Enhancement-Mode: Vth=2.0~4.0V(VDS=10V, ID=1mA) .
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK2545(Q,T) |
Toshiba |
MOSFET N-ch 600V 6A 0.9 ohm |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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2SK2002-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2003-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2007 |
Other |
|
Data Sheet |
Negotiable |
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2SK2008 |
Other |
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Data Sheet |
Negotiable |
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2SK2009 |
Other |
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Data Sheet |
Negotiable |
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2SK2010 |
Other |
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Data Sheet |
Negotiable |
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