Product Summary
The BDX54C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. The BDX54C is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The application areas of the BDX54C include audio amplifiers, linearand switching industrial equipment.
Parametrics
BDX54C absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO Emitter-base Voltage (IC = 0): 5 V; (4)IC Collector Current: 8 A; (5)ICM Collector Peak Current (repetitive): 12 A; (6)IB Base Current: 0.2 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 60 W; (8)Ts tg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.
Features
BDX54C features: (1)Power Darlington TR; (2)Complement to BDX53, BDX53A, BDX53B and BDX53C respectively.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BDX54C |
Fairchild Semiconductor |
Transistors Darlington PNP Darlington 8A 100V |
Data Sheet |
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BDX54CG |
ON Semiconductor |
Transistors Darlington 8A 100V Bipolar Power PNP |
Data Sheet |
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BDX54CTU |
Fairchild Semiconductor |
Transistors Darlington PNP Darlington 8A 100V |
Data Sheet |
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BDX54C-S |
Bourns |
Transistors Darlington 100V 8A PNP |
Data Sheet |
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