(China (Mainland))
Product Summary
The DMG3415U is a P-channel enhancement mode mosfet. The DMG3415U is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The DMG3415U is used in DC-DC Converters, Power management functions.
Parametrics
DMG3415U absolute maximum ratings: (1)Drain-Source Voltage VDSS: -20 V; (2)Gate-Source Voltage VGSS: ±8 V; (3)Continuous Drain Current VGS = -4.5V ID: -4.0A at Steady TA = 25℃; -3.5A at State TA = 70℃; (4)Pulsed Drain Current (10us pulse, duty cycle = 1%) IDM: -30 A.
Features
DMG3415U features: (1)Low On-Resistance: 43.5mΩ@ -4.5V; 53mΩ -2.5V; 71mΩ -1.8V; (2)Low Input Capacitance; (3)Fast Switching Speed; (4)Low Input/Output Leakage; (5)Lead Free By Design/RoHS Compliant; (6)ESD Protected Up To 3kV; (7)Green Device; (8)Qualified to AEC-Q101 Standards for High Reliability.
Diagrams
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 DMG3415U |
Other |
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Data Sheet |
Negotiable |
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DMG3415U-7 |
Diodes Inc. |
MOSFET P-CHANNEL ENHANCEMENT MODE |
Data Sheet |
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DMG3415UFY4-7 |
Diodes Inc. |
MOSFET MOSFET P-CHAN. |
Data Sheet |
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