(China (Mainland))
Product Summary
The IRG4PC50UDPBF is an with ultafast soft recovery diode. The IRG4PC50UDPBF is designed to be a drop-in replacement for ultrafast copack IGBT of the IGBT.
Parametrics
IRG4PC50UDPBF absolute maximum ratings: (1) Collector-to-Emitter Voltage VCES: 600V; (2) CContinuous Collector Current: 55A (IC@TC=25°C), Continuous Collector Current: 27A (IC@TC=100°C) ; (3) Pulsed Collector CurrentICM: 220A; (4) Clamped Inductive Load Current ILM: 220A; (5) CDiode Continuous Forward Current: 25A (IF@TC=100°C) ; (6) Gate-to-Emitter Voltage VGE: ±20V; (7) CMaximum Power Dissipation (PD@TC=25°C) : 200W; (8) Operating Junction and Storage Temperature Range, TJ, TSTG: -55°C to +150°C.
Features
IRG4PC50UDPBF features: (1) UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3) IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4) Industry standard TO-247AC package; (5) Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRG4PC50UDPBF |
International Rectifier |
IGBT Transistors 600V UltraFast 8-60kHz |
Data Sheet |
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Other |
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Data Sheet |
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Data Sheet |
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IRG4BAC50W |
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Data Sheet |
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IRG4BAC50W-S |
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Data Sheet |
Negotiable |
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IRG4BAC50W-SPBF |
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IGBT N-CHAN 600V 55A SUPER220 |
Data Sheet |
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IRG4BC10K |
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IGBT UFAST 600V 9.0A TO-220AB |
Data Sheet |
Negotiable |
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