(China (Mainland))
Product Summary
The NTD2955T4G is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power motor controls, the NTD2955T4G is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Parametrics
NTD2955T4G maximum ratings (TJ= 25°C unless otherwise noted) : (1) Drain-to-Source Voltage VDSS: -60 Vdc; (2) Gate-to-Source Voltage Continuous VGS: ± 20 Vdc, Gate-to-Source Voltage Non-repetitive (tp ≤ 10 ms) VGSM: ±25Vpk; (3) Drain Current Continuous@Ta=25°C, ID: -12 Adc, Drain Current Single Pulse (tp ≤ 10 ms) IDM: -36 Apk; (4) Total Power Dissipation@Ta=25°C PD: 55W; (5) Operating and Storage Temperature Range TJ, Tstg: -55 to 175°C; (6) Single Pulse Drain-to-Source Avalanche Energy- Starting TJ= 25°C (VDD = 25 Vdc, VGS=10Vdc, Peak IL=12 Apk, L = 3.0mH, RG=25Ω ) EAS: 216mJ; (7) Thermal Resistance Junction-to-Case RJC: 2.73°C/W; (8) Thermal Resistance Junction-to-Ambient (Note 1) R JA 71.4°C/W; (9) Thermal Resistance Junction-to-Ambient (Note 2) RJA: 100°C/W; (10) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds TL: 260°C.
Features
NTD2955T4G features: (1) Avalanche Energy Specified; (2) IDSS and VDS(on) Specified at Elevated Temperature; (3) Designed for Low-Voltage, High-Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes; (4) Pb-Free Packages are Available.
Diagrams
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Pricing (USD) |
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 NTD2955T4G |
ON Semiconductor |
MOSFET -60V -12A P-Channel |
Data Sheet |
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Data Sheet |
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NTD20N03L27-1G |
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NTD20N03L27T4G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
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