Product Summary

The SI4804BDY-T1-E3 is a dual N-channel, 30V (D-S) mosfet. The package of the SI4804BDY-T1-E3 is SOIC-8.

Parametrics

SI4804BDY-T1-E3 absolute maximum ratings: (1) Drain-Source Voltage: 30V; (2) Gate-Source Voltage: ±20A; (3) Continuous Drain Current: 6A; (4) Pulsed Drain Current: 30A; (5) Continuous Source Current (MOSFET Diode Conduction) : 2.3A; (6) Power Dissipation: 1.7A; (7) Operating Junction and Storage Temperature Range: -55 to 150°C (8) Maximum Junction-to-Ambient: 62.5°C/W.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4804BDY-T1-E3
SI4804BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 7.5A 2W
Data Sheet
0-1: $0.64
1-10: $0.49
10-50: $0.47
50-100: $0.43
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4800BDY-T1-E3
SI4800BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3
Vishay/Siliconix
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
Data Sheet
0-1: $0.44
1-10: $0.31
10-50: $0.31
50-100: $0.30
SI4800DY-E3
SI4800DY-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
Negotiable 
SI4800DY-T1
SI4800DY-T1
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
Negotiable 
SI4802DY
SI4802DY
Vishay/Siliconix
MOSFET 30V 8.4A 2.5W
Data Sheet
Negotiable 
SI4802DY-T1
SI4802DY-T1
Vishay/Siliconix
MOSFET 30V 8.4A 2.5W
Data Sheet
Negotiable