Product Summary

Description:Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management

Parametrics

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc= 25°C) IC 600 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 1200* Amperes
Emitter Current** (Tc = 25°C) IE 600 Amperes
Peak Emitter Current** IEM 1200* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 4100 Watts
Mounting Torque, M8 Main Terminal – 8.83~10.8 N · m
Mounting Torque, M6 Mounting – 1.96~2.94 N · m
Mounting Torque, M4 Terminal – 0.98~1.47 N · m
Weight – 560 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

Features

Features:
(1) Low Drive Power; 
(2) Low VCE(sat); 
(3) Discrete Super-Fast Recovery Free-Wheel Diode; 
(4) High Frequency Operation; 
(5) Isolated Baseplate for Easy Heat Sinking