(China (Mainland))
Product Summary
The SI2316BDS-T1-E3 is a N-Channel 30-V (D-S) MOSFET. Applications of the SI2316BDS-T1-E3 include: Battery Switch and DC/DC Converter.
Parametrics
SI2316BDS-T1-E3 absolute maximum ratings: (1) Drain-Source Voltage VDS: 30V; (2) Gate-Source Voltage VGS: ±20V; (3) Continuous Drain Current (TJ=150°C) , TC=25°C: 4.5V, TC=70°C: 3.6V, TA=25°C: 3.9V , TA=70°C: 3.13V; (4) Operating Junction and Storage Temperature Range Tj, Tstg: -55°C to 150°C; (5) Maximum Junction-to-Ambient ≤5sec RthJA: 80 to 100°C/W; (6) Maximum Junction-to-Foot (Drain) RthJF: 60 to 75°C/W.
Features
SI2316BDS-T1-E3 features: (1) TrenchFET Power MOSFET; (2) PWM Optimized; (3) 100% Rg tested.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI2316BDS-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 4.5A 1.66W |
Data Sheet |
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Data Sheet |
Negotiable |
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