Product Summary

The AT-31625-TR1 is a low cost, NPN medium power silicon bipolar junction transistor housed in a miniature, MSOP-3 surface mount plastic package. The AT-31625-TR1 can be used as a driver device or an output device, depending on the specific application. The AT-31625-TR1 features +28dBmCW output power when operated at 4.8 volts.

Parametrics

AT-31625-TR1 absolute maximum ratings: (1 )VEBO Emitter-Base Voltage: 1.4V; (2) Collector-Base Voltage: 16.0V; (3) VCEO Collector-Emitter Voltage: 9.5V; (4) IC Collector Current: 320mA; (5) PT Power Dissipation: 1.0W; (6) Tj Junction Temperature: 150°C; (7) TSTG Storage Temperature: -65 to 15°C.

Features

AT-31625-TR1 features: (1) 4.8Volt Operation; (2) +28.0dBm Pout@900MHz,Typ; (3) 70% Collector Efficiency@900 MHz, Typ; (4) 9dB Power Gain@900MHz, yp; (5) -31 dBc IMD3@Pout of 21dBm per Tone, 900MHz,Typ; (6) 50% Smaller than SOT-223 Package.

Diagrams

AT-31625-TR1 Pin Configuration

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