Product Summary

The FZ3600R12KE3 is an insulated gate bipolar transistor module.

Parametrics

FZ3600R12KE3 absolute maximum ratings: (1)Collector emitter voltage, Tvj= 25℃, VCES: 1200V; (2)DC collector current: Tc= 70℃, Tvj= 150℃, ICnom: 3600A; Tc= 25℃, Tvj= 150℃, IC: 4700A; (3)Repetitive peak collector current, tp= 1ms, ICRM: 7200A; (4)Total power dissipation, Tc= 25℃, Tvj= 150℃, Ptot: 15.0kW; (5)Gate-emitter peak voltage, VGES: ±20V.

Features

FZ3600R12KE3 features: (1)Forword voltage, IF= 3600A, VGE= 0A, Tvj= 25℃, VF: 2.20 to 2.80V; Tvj= 125℃, VF: 2.00 to 2.60V; (2)Peak reverse recovery current, IF= 3600A, -diF/dt= 16000A/μs(Tvj= 125℃), VR= 600V, VGE= -15V, Tvj= 25℃, IRM: 1150A; Tvj= 125℃, IRM: 1800A; (3)Recovered charge, IF= 3600A,-diF/dt= 16000A/μs(Tvj= 125℃), VR= 600V, VGE= -15V, Tvj= 25℃, Qr: 170μC; Tvj= 125℃, Qr: 405μC; (4)Reverse recovery energy, IF= 3600A, -diF/dt= 16000A/μs(Tvj= 125℃), VR= 600V, VGE= -15V, Tvj= 25℃, Erec: 54.0mJ; Tvj= 125℃, Erec: 105mJ; (5)Thermal resistance, junction to case, pro Diode/ per diode, RthJC: 14.0K/hW; (6)Thermal resistance, case to heatsink, pro Diode/ per diodec, λPaste= 1W/(mK)/ λgrease= 1W/(mK), RthCH: 10.5K/hW.

Diagrams

FZ3600R12KE3 block diagram

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(USD)		 Quantity
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