Product Summary

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The
IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345

Parametrics

Absolute Maximum Ratings TC = 25, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 75 A
At TC = 110℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 60 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 240 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ
 = 150℃ (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 600V
Power Dissipation Total at TC = 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 463 W
Power Dissipation Derating TC > 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7 W/℃
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150℃
Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260℃

Features

Features
? >100kHz Operation At 390V, 30A
? 200kHz Operation At 390V, 18A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125℃
? Low Conduction Loss
? Temperature Compensating SABER Model