Product Summary

600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. This IGBT
is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high
frequency switch mode power supplies.Formerly Developmental Type TA49347

Parametrics

Absolute Maximum Ratings TC = 25℃, Unless Otherwise Speci?ed
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 75 A
At TC = 110℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 63 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150℃, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 200A at 600V
Power Dissipation Total at TC = 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 625 W
Power Dissipation Derating TC > 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W/℃
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150℃
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260℃

Features

Features
? 100kHz Operation At 390V, 40A
? 200kHz Operation At 390V, 20A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ= 125℃
? Low Conduction Loss

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
HGTG40N60A4
HGTG40N60A4

Fairchild Semiconductor

IGBT Transistors 600V N-Channel IGBT SMPS Series

Data Sheet

0-1: $7.85
1-25: $6.61
25-100: $6.08
100-250: $5.54
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
HGTG10N120BN
HGTG10N120BN

Other


Data Sheet

Negotiable 
HGTG10N120BND
HGTG10N120BND

Fairchild Semiconductor

IGBT Transistors 35A 1200V N-Ch

Data Sheet

0-1: $2.90
1-25: $2.62
25-100: $2.38
100-250: $2.15
HGTG10N120BND_Q
HGTG10N120BND_Q

Fairchild Semiconductor

IGBT Transistors 35A 1200V N-Ch

Data Sheet

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HGTG11N120CN
HGTG11N120CN

Fairchild Semiconductor

IGBT Transistors 43A 1200V N-Ch

Data Sheet

0-1: $2.12
1-25: $1.90
25-100: $1.69
100-250: $1.52
HGTG11N120CND
HGTG11N120CND

Fairchild Semiconductor

IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde

Data Sheet

0-1: $2.31
1-25: $2.08
25-100: $1.90
100-250: $1.71
HGTG12N60A4
HGTG12N60A4

Fairchild Semiconductor

IGBT Transistors 600V N-Channel IGBT SMPS Series

Data Sheet

0-1: $1.88
1-25: $1.50
25-100: $1.16
100-250: $1.11