Product Summary
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. This IGBT
is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high
frequency switch mode power supplies.Formerly Developmental Type TA49347
Parametrics
Absolute Maximum Ratings TC = 25℃, Unless Otherwise Speci?ed
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 75 A
At TC = 110℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 63 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150℃, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 200A at 600V
Power Dissipation Total at TC = 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 625 W
Power Dissipation Derating TC > 25℃ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W/℃
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150℃
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260℃
Features
Features
? 100kHz Operation At 390V, 40A
? 200kHz Operation At 390V, 20A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ= 125℃
? Low Conduction Loss
Image | Part No | Mfg | Description | Pricing (USD) |
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HGTG40N60A4 |
Fairchild Semiconductor |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IGBT Transistors 35A 1200V N-Ch |
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IGBT Transistors 35A 1200V N-Ch |
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IGBT Transistors 43A 1200V N-Ch |
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IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde |
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IGBT Transistors 600V N-Channel IGBT SMPS Series |
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