(China (Mainland))
Product Summary
The IS41C16105-50K is a 16-bit high-performance CMOS dynamic random access memory. The Byte Write control, of upper and lower byte, makes the IS41C16105-50K ideal for use in 16-bit wide data bus systems. The IS41C16105-50K is suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
Parametrics
IS41C16105-50K absolute maximum ratings: (1) Voltage on Any Pin Relative to GND VT: 5V , 1.0 to 7.0V; (2) Supply Voltage VCC: 5V , 1.0 to 7.0V; (3) Output Current IOUT: 50mA; (4) Power Dissipation PD: 1W; (5) Commercial Operation Temperature: 0 to 70°C, Extended Temperature: -30°C to +85°C, Industrail Temperature: -40 to +85°C; (6) Storage Temperature Tstg: -55 to +125°C.
Features
IS41C16105-50K features: (1) TTL compatible inputs and outputs; tristate I/O; (2) Refresh Interval: 1,024 cycles/16 ms; (3) Refresh Mode: RAS-Only, CAS-before-RAS (CBR) , and Hidden; (4) JEDEC standard pinout; (5) Single power supply: 5V ± 10%; (6) Byte Write and Byte Read operation via two CAS; (7) Extended Temperature Range: -30°C to 85°C; (8) Industrail Temperature Range: -40°C to 85°C
Diagrams
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 IS41LV16105C-50KLI-TR |
ISSI |
DRAM 16Mb (1M x 16) 50ns DRAM Async |
Data Sheet |
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IS41LV16256B-35TL |
ISSI |
DRAM 4M 256Kx16 35ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60TL |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60KLI-TR |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60T |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV44002C-50CTGI |
ISSI |
DRAM 16M, 3.3V, 4Mx4 50ns, EDO DRAM Async |
Data Sheet |
Negotiable |
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