(China (Mainland))
Product Summary
DEVICE DESCRIPTION:The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc. with a minimum of external components. With the addition of two capacitors and a
resistor the devices provide drain voltage and current control for three external groundedsource FETs , gene rat i ng the regu la ted 
negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to
supply other external circuits
Parametrics
ABSOLUTE MAXIMUM RATINGS
Supply Voltage -0.6V to 12V
Supply Current 100mA
Input Voltage (VPOL) 25V Continuous
Drain Current (per FET) 0 to 15mA(set by RCAL)
Operating Temperature -40 to 70°C
Storage Temperature -50 to 85°C
Power Dissipation (Tamb= 25°C)
QSOP20 500mW
Features
FEATURES
(1) Provides bias for GaAs and HEMT FETs;
(2) Drives up to three FETs;
(3) Dynamic FET protection;
(4) Drain current set by external resistor;
(5) Regulated negative rail generator requires only 2 external capacitors;
(6) Choice in drain voltage;
(7) Wide supply voltage range;
(8) Polarisation switch for LNBs -supporting zero volt gate switching topology.;
(9) 22kHz tone detection for band switching;
(10) Compliant with ASTRA control specifications;
(11) QSOP surface mount package
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 ZNBG3211 |
Other |
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Data Sheet |
Negotiable |
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ZNBG3211Q20TC |
Diodes Inc. |
MOSFET 3BIAS TONE H/V SWTCH 2.0V |
Data Sheet |
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