(China (Mainland))
Product Summary
DESCRIPTION:The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective high performance
Parametrics
ABSOLUTE MAXIMUM RATINGS
Maximum Collector Emitter Voltage:700 V
Peak DC Collector Current:8 A
Minimum DC Current Gain :60@5A@5V|20@5A@5V
Maximum Collector Emitter Saturation Voltage:1.6@0.5A@5A V
Maximum Collector Base Voltage 1400 V
Features
STMicroelectronics PREFERRED SALESTYPE
NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE
HIGH VOLTAGE CAPABILITY ( > 1400 V )
HIGH DC CURRENT GAIN ( TYP. 150 )
U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N))
LOW BASE-DRIVE REQUIREMENTS
DEDICATED APPLICATION NOTE AN1184
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BU808DFI |
STMicroelectronics |
Transistors Darlington NPN Sw Darlington |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
BU806 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
||||
|
BU807 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
||||
 |
BU807FI |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BU807TU |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
||||
|
BU808 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BU808-3PN |
Other |
|
Data Sheet |
Negotiable |
|
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