Product Summary

Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Parametrics

Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited):79A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited:56A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited:56A
IDM Pulsed Drain Current :315 A
PD @TC = 25°C Maximum Power Dissipation:110W
Linear Derating Factor:0.76W/℃
VGS Gate-to-Source Voltage:±20 V
dv/dt Peak Diode Recovery ::2V/ns
TJ  Operating Junction and TSTG Storage Temperature Range: -55 to + 175℃
Soldering Temperature, for 10 seconds(1.6mm from case):300

Features

Benefits
 Improved  Gate, Avalanche and Dynamic dv/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFR1018ETRRPBF
IRFR1018ETRRPBF

International Rectifier

MOSFET

Data Sheet

0-4350: $0.32
4350-6000: $0.32
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFR
IRFR

Other


Data Sheet

Negotiable 
IRFR/U014A
IRFR/U014A

Other


Data Sheet

Negotiable 
IRFR/U120N
IRFR/U120N

Other


Data Sheet

Negotiable 
IRFR/U130A
IRFR/U130A

Other


Data Sheet

Negotiable 
IRFR/U230A
IRFR/U230A

Other


Data Sheet

Negotiable 
IRFR010
IRFR010

Vishay/Siliconix

MOSFET N-Chan 60V 7.7 Amp

Data Sheet

0-2320: $0.79