Product Summary
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Parametrics
Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited):79A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited:56A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited:56A
IDM Pulsed Drain Current :315 A
PD @TC = 25°C Maximum Power Dissipation:110W
Linear Derating Factor:0.76W/℃
VGS Gate-to-Source Voltage:±20 V
dv/dt Peak Diode Recovery ::2V/ns
TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175℃
Soldering Temperature, for 10 seconds(1.6mm from case):300
Features
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
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IRFR1018ETRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
IRFR |
Other |
Data Sheet |
Negotiable |
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IRFR/U014A |
Other |
Data Sheet |
Negotiable |
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IRFR/U120N |
Other |
Data Sheet |
Negotiable |
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IRFR/U130A |
Other |
Data Sheet |
Negotiable |
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IRFR/U230A |
Other |
Data Sheet |
Negotiable |
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IRFR010 |
Vishay/Siliconix |
MOSFET N-Chan 60V 7.7 Amp |
Data Sheet |
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