Product Summary



FJB3307D
High Voltage Fast Switching NPN Power Transisto


 

Parametrics

Absolute Maximum Ratings 
VCBO Collector-Base Voltage :700 V
VCEO Collector-Emitter Voltage :400 V
VEBO Emitter-Base Voltage :9 V
IC Collector Current (DC) :8 A
ICP * Collector Current (Pulse) :16 A
IB Base Current (DC) :4 A
IBP * Base Current (Pulse) :8 A
TJJunction Temperature :150 °C
TSTG Storage Temperature :-55 to 150 °C

Features

Features
? Built-in Diode between Collector and Emitter
? Suitable for Electronic Ballast and Switch Mode Power Supplies