Product Summary
2N3055 transistor
Parametrics
ABSOLUTE MAXIMUM RATINGS:
VCBO collector-Base Voltage (Ie=0) value :100V
VCER Collector-Emitter Voltage(Rbe≤100Ω) value :70V
VCEO Collector-Emitter Voltage(Ib=0) value:60V
Vebo Emitter-Base Voltage(Ic=0) valye : 7V
Ic Collector Current value :15A
Ib Base Current value :7A
Plot Total Dissipation at Tc≤25℃ value:115W
Tstg Storage Temperature value:-65 to 200℃
Tj Max.Operating Junction Temperature value:200℃
Features
STMicroelectronics PREFERRED SALESTYPES
n COMPLEMENTARY NPN-PNP DEVICE
Image | Part No | Mfg | Description | ![]() |
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![]() 2N3055 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN Power Switching |
![]() Data Sheet |
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![]() 2N3055_MJ2955 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055A |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055AG |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]()
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![]() |
![]() 2N3055E |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) NPN 15A 60V |
![]() Data Sheet |
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![]() |
![]() 2N3055H |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055HG |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]() Negotiable |
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