Product Summary
2N3055 transistor
Parametrics
ABSOLUTE MAXIMUM RATINGS:
VCBO collector-Base Voltage (Ie=0) value :100V
VCER Collector-Emitter Voltage(Rbe≤100Ω) value :70V
VCEO Collector-Emitter Voltage(Ib=0) value:60V
Vebo Emitter-Base Voltage(Ic=0) valye : 7V
Ic Collector Current value :15A
Ib Base Current value :7A
Plot Total Dissipation at Tc≤25℃ value:115W
Tstg Storage Temperature value:-65 to 200℃
Tj Max.Operating Junction Temperature value:200℃
Features
STMicroelectronics PREFERRED SALESTYPES
n COMPLEMENTARY NPN-PNP DEVICE
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N3055 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Power Switching |
Data Sheet |
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2N3055_MJ2955 |
Other |
Data Sheet |
Negotiable |
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2N3055A |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
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2N3055AG |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
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2N3055E |
Other |
Data Sheet |
Negotiable |
|
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2N3055G |
ON Semiconductor |
Transistors Bipolar (BJT) NPN 15A 60V |
Data Sheet |
|
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2N3055H |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
|
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2N3055HG |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
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