(China (Mainland))
Product Summary
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements
Parametrics
ABSOLUTE MAXIMUM RATINGS:
VDS Drain-source Voltage (VGS = 0) :100 V
VDGR Drain-gate Voltage (RGS = 20 kΩ): 100 V
VGS Gate- source Voltage :± 20 V
ID Drain Current (continuous) at TC = 25°C : 22 A
ID Drain Current (continuous) at TC = 100°C : 15 A
IDM(?) Drain Current (pulsed) : 88 A
Ptot Total Dissipation at TC = 25°C : 85 W
Derating Factor :0.57 W/°C
dv/dt (1) Peak Diode Recovery voltage slope : 9 V/ns
EAS (2) Single Pulse Avalanche Energy : 220 mJ
Tstg Storage Temperature: -55 to 175 °C
Tj Max. Operating Junction Temperatur :-55 to 175 °C
Features
TYPICAL RDS(on) = 0.055Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED CHARACTERIZATION
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRF540 |
Vishay/Siliconix |
MOSFET N-Chan 100V 28 Amp |
Data Sheet |
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IRF540N |
International Rectifier |
MOSFET N-CH 100V 33A TO-220AB |
Data Sheet |
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IRF540N_R4942 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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 |
IRF540NL |
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MOSFET N-CH 100V 33A TO-262 |
Data Sheet |
Negotiable |
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IRF540NLPBF |
International Rectifier |
MOSFET MOSFT 100V 33A 44mOhm 47.3nC |
Data Sheet |
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IRF540NPBF |
International Rectifier |
MOSFET MOSFT 100V 33A 44mOhm 47.3nC |
Data Sheet |
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IRF540NS |
International Rectifier |
MOSFET N-CH 100V 33A D2PAK |
Data Sheet |
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IRF540NSPBF |
International Rectifier |
MOSFET |
Data Sheet |
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