Product Summary

DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements

Parametrics

ABSOLUTE MAXIMUM RATINGS:
VDS Drain-source Voltage (VGS = 0) :100 V
VDGR Drain-gate Voltage (RGS = 20 kΩ): 100 V
VGS Gate- source Voltage :± 20 V
ID Drain Current (continuous) at TC = 25°C : 22 A
ID Drain Current (continuous) at TC = 100°C : 15 A
IDM(?) Drain Current (pulsed) : 88 A
Ptot Total Dissipation at TC = 25°C : 85 W
Derating Factor :0.57 W/°C
dv/dt (1) Peak Diode Recovery voltage slope : 9 V/ns
EAS (2) Single Pulse Avalanche Energy : 220 mJ
Tstg Storage Temperature: -55 to 175 °C
Tj Max. Operating Junction Temperatur :-55 to 175 °C

Features

 TYPICAL RDS(on) = 0.055Ω
 EXCEPTIONAL dv/dt CAPABILITY
 100% AVALANCHE TESTED
 LOW GATE CHARGE
 APPLICATION ORIENTED CHARACTERIZATION

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF540
IRF540
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
0-1: $2.82
1-10: $2.51
10-100: $2.21
100-250: $2.08
IRF540, SiHF540
IRF540, SiHF540
Other

Data Sheet
Negotiable 
IRF540,127
IRF540,127

MOSFET N-CH 100V 23A TO-220AB
Data Sheet
Negotiable 
IRF540_R4941
IRF540_R4941
Fairchild Semiconductor
MOSFET USE 512-IRF540A
Data Sheet
Negotiable 
IRF540A
IRF540A
Fairchild Semiconductor
MOSFET TO-220 N-Ch A-FET
Data Sheet
Negotiable 
IRF540L
IRF540L

MOSFET N-CH 100V 28A TO-262
Data Sheet
0-300: $1.01
IRF540N
IRF540N
International Rectifier
MOSFET N-CH 100V 33A TO-220AB
Data Sheet
1-350: $0.80
IRF540N_R4942
IRF540N_R4942
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable