(China (Mainland))
Product Summary
Advantages
(1)Plus 264TM package for clip or spring;
(2)Space savings;
(3)High power density
Parametrics
Maximum Ratings:
VDSS TJ= 25° C to 150° C 500 V
VDGR TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
VGSS Continuous ±3 0 V
VGSM Transient ±4 0 V
ID25 TC = 25° C 100 A
IDRMS External lead current limit 75 A
IDM TC = 25° C, pulse width limited by TJM 250 A
IAR TC=25° C 100 A
EAR TC= 25° C 100 mJ
EAS TC= 25° C 5J
Features
Features
(1)International standard packages;
(2)Fast recovery diode;
(3)Unclamped Inductive Switching (UIS) rated;
(4)Low package inductance: easy to drive and to protect
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFB100N50P |
Ixys |
MOSFET 100 Amps 500V 0.05 Ohms Rds |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
IXFB100N50P |
Ixys |
MOSFET 100 Amps 500V 0.05 Ohms Rds |
Data Sheet |
Negotiable |
|
||||
 |
IXFB132N50P3 |
Ixys |
MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET |
Data Sheet |
Negotiable |
|
||||
|
IXFB170N30P |
Ixys |
MOSFET Polar HiPer |
Data Sheet |
Negotiable |
|
||||
|
IXFB30N120P |
Ixys |
MOSFET 30 Amps 1200V 0.35 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFB40N110P |
Ixys |
MOSFET 40 Amps 1100V 0.2600 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFB62N80Q3 |
Ixys |
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A |
Data Sheet |
Negotiable |
|
||||
