(China (Mainland))
Product Summary
General Description:These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control
Parametrics
Absolute Maximum Ratings
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C) 45 A
ID Drain Current - Continuous (TC = 100°C) 27.8 A
IDM Drain Current - Pulsed (Note 1) 180 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ
IAR Avalanche Current (Note 1) 45 A
EAR Repetitive Avalanche Energy (Note 1) 27.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C) 278 W
PD Power Dissipation - Derate above 25°C 2.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C
Features
Features
? 45A, 200V, RDS(on) = 0.065Ω @VGS = 10 V
? Low gate charge ( typical 133 nC)
? Low Crss ( typical 120 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 SSH45N20B |
Other |
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Data Sheet |
Negotiable |
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SSH45N20B_FP001 |
Fairchild Semiconductor |
MOSFET NCh/200V/45a/0.18Ohm |
Data Sheet |
Negotiable |
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