(China (Mainland))
Product Summary
DESCRIPTION:The SuperMESH? series is obtained through an extreme optimization of STs well established stripbased PowerMESH? layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh? products
Parametrics
ABSOLUTE MAXIMUM RATINGS
VDS Drain-source Voltage (VGS = 0) ：450 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) ：450 V
VGS Gate- source Voltage ：± 30 V
ID Drain Current (continuos) at TC = 25°C ： 1.5 0.5 A
ID Drain Current (continuos) at TC = 100°C ;0.95 0.315 A
IDM ( ) Drain Current (pulsed) 6 2 A
PTOT Total Dissipation at TC = 25°C 30 3.1 W
Derating Factor 0.24 0.025 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
Tj Operating Junction Temperature -65 to 150°C
Tstg Storage Temperature -65 to 150°C
Features
Feature :
(1) TYPICAL RDS(on) = 4.1 Ω;
(2) EXTREMELY HIGH dv/dt CAPABILITY;
(3) 100% AVALANCHE TESTED;
(4) GATE CHARGE MINIMIZED;
(5) NEW HIGH VOLTAGE BENCHMAR
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 STD2NC45-1 |
STMicroelectronics |
MOSFET N-Ch, 450V-4.1ohms 1.5A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
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STD20 |
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Data Sheet |
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STD200 |
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STD200D |
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PTC Resettable Fuses - |
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Data Sheet |
Negotiable |
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