(China (Mainland))
Product Summary
DESCRIPTION:Using the latest high voltage MESH OVERLAY?process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting application
Parametrics
ABSOLUTE MAXIMUM RATINGS:
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 250 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25°C 22 A
ID Drain Current (continuos) at TC = 100°C 13.9 A
IDM (l) Drain Current (pulsed) 88 A
PTOT Total Dissipation at TC = 25°C 135 W
Derating Factor 1.07 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2500 V
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
Tstg Storage Temperature –55 to 150 ℃
Tj Max. Operating Junction Temperature –55 to 150 ℃
Features
Feature:
(1) TYPICAL RDS(on) = 0.13 Ω;
(2) EXTREMELY HIGH dv/dt CAPABILITY;
(3) 100% AVALANCHE TESTED
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 STP22NS25Z |
STMicroelectronics |
MOSFET N-Ch 250 Volt 22 Amp |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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STP200N4F3 |
STMicroelectronics |
MOSFET N-Ch 40Volt 120Amp |
Data Sheet |
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 |
STP20N06 |
Other |
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Data Sheet |
Negotiable |
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STP20N06FI |
Other |
|
Data Sheet |
Negotiable |
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STP20N10 |
Other |
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Data Sheet |
Negotiable |
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STP20N10L |
Other |
|
Data Sheet |
Negotiable |
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STP20N10LFI |
Other |
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Data Sheet |
Negotiable |
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