Product Summary

DESCRIPTION:Using the latest high voltage MESH OVERLAY?process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting application 

Parametrics

ABSOLUTE MAXIMUM RATINGS:
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 250 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25°C 22 A
ID Drain Current (continuos) at TC = 100°C 13.9 A
IDM (l) Drain Current (pulsed) 88 A
PTOT Total Dissipation at TC = 25°C 135 W
Derating Factor 1.07 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2500 V
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
Tstg Storage Temperature –55 to 150 ℃
Tj Max. Operating Junction Temperature  –55 to 150 ℃  

Features

Feature:
(1) TYPICAL RDS(on) = 0.13 Ω; 
(2) EXTREMELY HIGH dv/dt CAPABILITY; 
(3) 100% AVALANCHE TESTED 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP22NS25Z
STP22NS25Z
STMicroelectronics
MOSFET N-Ch 250 Volt 22 Amp
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP200N6F3
STP200N6F3
STMicroelectronics
MOSFET N-channel 60 V 120 A PAK TO-22
Data Sheet
0-1: $2.75
1-10: $2.42
10-100: $2.04
100-250: $1.81
STP200NF03
STP200NF03
STMicroelectronics
MOSFET N-Ch 30 Volt 120 Amp
Data Sheet
0-720: $1.05
STP20N06
STP20N06
Other

Data Sheet
Negotiable 
STP20N95K5
STP20N95K5
STMicroelectronics
MOSFET N-Ch 950V 0.275 Ohm 17.5A SuperMESH 5
Data Sheet
0-1: $3.81
1-10: $3.12
10-100: $2.81
100-250: $2.59
STP20NM60FP
STP20NM60FP
STMicroelectronics
MOSFET N-Ch 600 Volt 20 Amp
Data Sheet
0-1: $3.40
1-10: $2.83
10-100: $2.49
100-250: $2.14
STP20NM65N
STP20NM65N
STMicroelectronics
MOSFET N-Channel 650V Pwr Mosfet
Data Sheet
0-620: $2.09
620-1000: $1.75
1000-2000: $1.68