Product Summary
STP80NF55-08
Parametrics
Absolute maximum ratings:
VDS Drain-source voltage (VGS = 0) 55 V
VGS Gate- source voltage ±20 V
ID (1)Drain current (continuos) at TC = 25 °C 80 A
ID (1)Drain current (continuos) at TC = 100 °C 80 A
IDM(2)Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C
Features
Feature:
STB80NF55-08T4 55 V, < 0.008Ω, 80 A
STP80NF55-08 55 V ,< 0.008 Ω, 80 A
STW80NF55-08 55 V ,< 0.008 Ω, 80
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STP80NF55-08 |
STMicroelectronics |
MOSFET N-Ch 55 Volt 80 Amp |
Data Sheet |
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Data Sheet |
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Data Sheet |
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