(China (Mainland))
Product Summary
SIPMOS Small-Signal-Transistor
Feature
(1)N-Channel;
(2)Enhancement mode;
(3)Logic Level;
(4)dv/dt rated;
(5)Pb-free lead plating; RoHS compliant
Parametrics
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Continuous drain current TA=25°C ID :0.66 A
Continuous drain current TA=70°C ID : 0.53A
Pulsed drain current TA=25°C ID puls :2.64A
Reverse diode dv/dt IS=0.66A, VDS=160V, di/dt=200A/μs, Tjmax=150°C dv/dt 6 kV/μs
Gate source voltage VGS :±20 V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation TA=25°C Ptot :1.8 W
Operating and storage temperature Tj, Tstg :-55... +150 °C
IEC climatic category; DIN IEC 68-1 :55/150/56
Features
Feature
(1)N-Channel;
(2)Enhancement mode;
(3)Logic Level;
(4)dv/dt rated;
(5)Pb-free lead plating; RoHS compliant
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSP297 L6327 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 200V .66A |
Data Sheet |
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|
BSP297 E6327 |
|
MOSFET N-CH 200V 660MA SOT-223 |
Data Sheet |
Negotiable |
|
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 |
BSP297 |
Other |
|
Data Sheet |
Negotiable |
|
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