(China (Mainland))
Product Summary
The BFP540 is a NPN silicon RF transistor. The highest gain low noise amplifier of the BFP540 is at 1.8GHz.
Parametrics
BFP540 maximum ratings: (1) Collector-emitter voltage VCEO: 4.5V; (2) Collector-emitter voltage VCES: 14V; (3) Collector-base voltage VCBO: 14V; (4)Emitter-base voltage VEBO: 1V; (5) Collector current IC: 80mA; (6) Base current IB: 8mA; (7) Total power dissipation1) TS ≤ 77°C: Ptot 250mW; (8) Junction temperature Tj: 150 °C; (9) Ambient temperature TA:-65 to 150°C (10) Storage temperature Tstg:-65 to 150°C.
Features
BFP540 NPN features: (1) For highest gain low noise amplifier at 1.8GHz; (2) Outstanding Gms = 21 dB ,Noise Figure F = 0.9 dB; (3) Gold metallization for high reliability; (4) SIEGET 45 - Line.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BFP540 |
Other |
|
Data Sheet |
Negotiable |
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BFP540F |
Other |
|
Data Sheet |
Negotiable |
|
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BFP540FE6327 |
Infineon Technologies |
Transistors Bipolar (BJT) NPN 4.5 V 80 mA |
Data Sheet |
Negotiable |
|
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 |
BFP540FESDE6327 |
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TRANS RF NPN 4.5V 80MA TSFP-4 |
Data Sheet |
Negotiable |
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