(China (Mainland))
Product Summary
The IS64WV20488BLL-10TA3 is a very high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS64WV20488BLL-10TA3 is fabricated using high performance CMOS technology of the ISSI. When CE is HIGH (deselected) , theIS64WV20488BLL-10TA3 assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS64WV20488BLL-10TA3 operates from a single power supply and all inputs are TTL-compatible.
Parametrics
IS64WV20488BLL-10TA3 absolute maximum ratings: (1) VTERM Terminal Voltage with Respect to GND: –0.5 to VDD + 0.5 V; (2) VDD VDD Relates to GND: –0.3 to 4.0 V; (3) TSTG Storage Temperature: –65 to +150 °C; (4) PT Power Dissipation: 1.0W.
Features
IS64WV20488BLL-10TA3 features: (1) High-speed access times:8, 10, 20 ns; (2) High-performance, low-power CMOS process; (3) Multiple center power and ground pins for greater noise immunity; (4) Easy memory expansion with CE and OE options; (5) CE power-down; (6) Fully static operation: no clock or refresh required; (7) TTL compatible inputs and outputs; (8) Single power supply: VDD 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc=1.65V to 2.2V; VDD 2.4V to 3.6V (IS61/64WV20488BLL) speed=10ns for Vcc=2.4V to 3.6V, speed=8ns for Vcc=3.3V + 5%; (9) Packages available:48-ball miniBGA (9mm x 11mm) ;44-pin TSOP (Type II) ; (10) Industrial and Automotive Temperature Support; (11)? Lead-free available.
Diagrams
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 IS64C25616AL-12CTLA3 |
ISSI |
SRAM 4M (256Kx16) 12ns Async SRAM 5v |
Data Sheet |
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IS64C25616AL-12CTLA3-TR |
ISSI |
SRAM 4M (256Kx16) 12ns Async SRAM 5v |
Data Sheet |
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IS64C6416 |
Other |
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Data Sheet |
Negotiable |
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IS64C6416AL |
Other |
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Data Sheet |
Negotiable |
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IS64C6416AL-15TLA3 |
ISSI |
SRAM 1M (64Kx16) 12ns Async SRAM 5v |
Data Sheet |
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IS64C6416AL-15TLA3-TR |
ISSI |
SRAM 1M (64Kx16) 12ns Async SRAM 5v |
Data Sheet |
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