(China (Mainland))
Product Summary
2SK1573 - Silicon N-Channel MOS FET - Hitachi Semiconductor
Parametrics
Absolute Maximum Ratings (Ta = 25°C)
Drain to source voltage VDSS :600 V
Gate to source voltage VGSS:±30 V
Drain current ID:15 A
Drain peak current ID(pulse)*1 :60 A
Body to drain diode reverse drain current IDR :15 A
Channel dissipation Pch*2 :125 W
Channel temperature Tch :150 °C
Storage temperature Tstg :–55 to +150°C
Features
Features
? Low on-resistance
? High speed switching
? Low drive current
? No secondary breakdown
? Suitable for switching regulator and DC-DC converter
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2SK1573 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||
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2SK1056 |
Other |
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Data Sheet |
Negotiable |
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2SK1057 |
Other |
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Data Sheet |
Negotiable |
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2SK1058 |
Other |
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Data Sheet |
Negotiable |
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2SK1058-E |
|
MOSFET N-CH 160V 7A TO-3P |
Data Sheet |
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2SK1061 |
Other |
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Data Sheet |
Negotiable |
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2SK1062 |
Other |
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Data Sheet |
Negotiable |
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