Product Summary

Description:Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration
with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management

Parametrics

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC 150 Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current** (TC = 25°C) IE 150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 1100 Watts
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

Features

Features:
(1) Low Drive Power;
(2) Low VCE(sat);
(3) Discrete Super-Fast Recovery Free-Wheel Diode;
(4) High Frequency Operation;
(5) Isolated Baseplate for Easy Heat Sinking