STP12NM50FP

STP12NM50FP - N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET - STMicroelectronics

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.40~0.45 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	0.45 / Piece
10 ~ 100 :	0.43 / Piece
100 ~ 1000 :	0.40 / Piece

PartNumber:: STP12NM50FP

Brand:: STMicroelectronics - ST | D/C:

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Chaney's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-05-29

From Other Seller

Part Number:STP12NM50FP
US $0.40 - 0.45
STP12NM50FP

US $1.70 - 3.60 / Piece
(0) Remove
Quantity:

piece

Product Summary

DESCRIPTION:The MDmesh? is a new revolutionary MOSFETtechnology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is
significantly better than that of similar competition’s products

Parametrics

Absolute Maximum ratings
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 12 12 (*) A
ID Drain Current (continuous) at TC = 100°C 7.5 7.5 (*) A
IDM (*) Drain Current (pulsed) 48 48 (*) A
PTOT Total Dissipation at TC = 25°C 160 35 W
Derating Factor 1.28 0.28 W/°C
VISO Insulation Winthstand Voltage (DC) -- 2500 V
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
Tj Operating Junction Temperature -65 to 150°C
Tstg Storage Temperature -65 to 150°C

Features

(1) TYPICAL RDS(on) = 0.30 Ω;
(2) HIGH dv/dt AND AVALANCHE CAPABILITIES;
(3) LOW INPUT CAPACITANCE AND GATE CHARGE;
(4) 100% AVALANCHE TESTED;
(5) LOW GATE INPUT RESISTANCE ;
(6) TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS