Product Summary
General Decription:These N-Channel enhancement mode power field effect transistors are produced using Fairchilds propristary,planar strips,DMOS technology
Parametrics
Absolute Maximum Ratings
Vdss Drain-Source Voltage :500V
Id Drain Current Continuous (T=25℃) :1.3A
Id Drain Current Continuous (T=100℃):0.82A
Features
Feature
(1)1.3A,500V,Rds(on)=5.3Ω@VGS=10V;
(2)Low gate charge(typical 6.0nC);
(3)Low Crss(typical 4.0 pF);
(4)Fast switching ;
(5)100% avalanche tested ;
(6)Improved dv/dt capabilty
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![]() FQPF2N50 |
![]() Fairchild Semiconductor |
![]() MOSFET |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() FQPF10N20 |
![]() Fairchild Semiconductor |
![]() MOSFET 200V N-Ch MOSFET |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FQPF10N20C |
![]() Fairchild Semiconductor |
![]() MOSFET 200V N-Ch MOSFET |
![]() Data Sheet |
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![]() |
![]() FQPF10N20T |
![]() Fairchild Semiconductor |
![]() MOSFET |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FQPF10N50CF |
![]() Fairchild Semiconductor |
![]() MOSFET 500V N-Ch MOSFET |
![]() Data Sheet |
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![]() |
![]() FQPF10N60C |
![]() Fairchild Semiconductor |
![]() MOSFET 600V N-Ch Q-FET advance C-Series |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FQPF10N60CF |
![]() Fairchild Semiconductor |
![]() MOSFET 600V N-Ch MOSFET |
![]() Data Sheet |
![]() Negotiable |
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