(China (Mainland))
Product Summary
General Decription:These N-Channel enhancement mode power field effect transistors are produced using Fairchilds propristary,planar strips,DMOS technology
Parametrics
Absolute Maximum Ratings
Vdss Drain-Source Voltage :500V
Id Drain Current Continuous (T=25℃） ：1.3A
Id Drain Current Continuous (T=100℃）:0.82A
Features
Feature
(1)1.3A,500V,Rds(on)=5.3Ω@VGS=10V;
(2)Low gate charge(typical 6.0nC);
(3)Low Crss(typical 4.0 pF);
(4)Fast switching ;
(5)100% avalanche tested ;
(6)Improved dv/dt capabilty
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FQPF2N50 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FQPF10N20 |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
Negotiable |
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FQPF10N20C |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
|
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FQPF10N20T |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
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|
FQPF10N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
|
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|
FQPF10N60CF |
Fairchild Semiconductor |
MOSFET 600V N-Ch MOSFET |
Data Sheet |
Negotiable |
|
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|
FQPF10N60CT |
Fairchild Semiconductor |
MOSFET N-CH/600V/10A QFET C-Series |
Data Sheet |
Negotiable |
|
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