(China (Mainland))
Product Summary
Parametrics
Absolute Maximum Ratings:WIV Working Inverse Voltage 20V,IO Average Rectified Current 50 mA.IF DC Forward Current 150 mA,if Recurrent Peak Forward Current 150 mA.if(surge) Peak Forward Surge Current Pulse width = 1.0 second 250 mA.Tstg Storage Temperature Range -55 to +150 °C,TJ Operating Junction Temperature 150 °C.
Features
High Conductance Low Leakage Diode.
Diagrams
<IMG src="http://www.seekic.com/uploadfile/ic-mfg/201271031847541.jpg" border=0>
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MMBD1705A |
Fairchild Semiconductor |
Rectifiers High Cond Lo Leakage |
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
MMBD 7000 LT1 |
Infineon Technologies |
Diodes (General Purpose, Power, Switching) AF DIODE 100V 0.2A |
Data Sheet |
|
|
||||||||||||
|
MMBD 914 LT1 |
Infineon Technologies |
Diodes (General Purpose, Power, Switching) AF DIODE 100V 0.25A |
Data Sheet |
|
|
||||||||||||
|
MMBD 914 LT3 |
Infineon Technologies |
Diodes (General Purpose, Power, Switching) Silicon Switch Diode |
Data Sheet |
|
|
||||||||||||
 |
MMBD1000LT1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBD1000T1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBD1005LT1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
