(China (Mainland))
Product Summary
Trans Darlington PNP 80V 1A SOT223
Parametrics
Maximum Ratings:
collector-emitter voltage BSP62 Vceo :80V
Collector-base voltage BSP62 Vcbo :90V
Emitter-base voltage Vebo "5V
Collector current Ic :1A
Peak collecter current Icm :2A
Base Current Ib :100mA
Total power dissipation-Ts ≤ 124℃ Ptot :1.5w
Junction temperature Tj :150℃
Storage temperature Tstg : -65...150℃
Features
Feature:
(1) High collector current;
(2) Low collector-emitter saturation voltage;(3) Complementary types: BSP50...BSP52 (NPN);
(4) Pb-free (RoHS compliant) package1);
(5) Qualified according AEC Q101
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSP62 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS DARLINGTON TAPE-7 |
Data Sheet |
Negotiable |
|
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|
BSP62,115 |
NXP Semiconductors |
Transistors Darlington TRANS DARLINGTON |
Data Sheet |
|
|
||||||||||||
 |
BSP62T1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BSP62 |
Other |
|
Data Sheet |
Negotiable |
|
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