HFA25PB60

Product Summary

Description:International Rectifiers HFA25PB60 is a state of the art ultra fast recovery diode.  Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available.  With
basic ratings of 600 volts and 25 amps  continuous current, the HFA25PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery.  The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed

Parametrics

Absolute Maximum Ratings
VR Cathode-to-Anode Voltage 600 V
IF @ TC = 100°C Continuous Forward Current 25A
IFSM Single Pulse Forward Current 225A
IFRM Maximum Repetitive Forward Current 100A
PD @ TC = 25°C Maximum Power Dissipation 150W
PD @ TC = 100°C Maximum Power Dissipation 60W
TJ Operating Junction and -55 to +150℃
TSTG Storage Temperature Range -55 to +150℃Feature
(1) Ultrafast Recovery; 
(2) Ultrasoft Recovery; 
(3) Very Low IRRM; 
(4) Very Low Qrr; 
(5) Specified at Operating Conditions Benefits; 
(6) Reduced RFI and EMI; 
(7) Reduced Power Loss in Diode and Switching Transistor; 
(8) Higher Frequency Operation; 
(9) Reduced Snubbing; 
(10) Reduced Parts Count

Features

Feature
(1) Ultrafast Recovery; 
(2) Ultrasoft Recovery; 
(3) Very Low IRRM; 
(4) Very Low Qrr; 
(5) Specified at Operating Conditions Benefits; 
(6) Reduced RFI and EMI; 
(7) Reduced Power Loss in Diode and Switching Transistor; 
(8) Higher Frequency Operation; 
(9) Reduced Snubbing; 
(10) Reduced Parts Count