(China (Mainland))
Product Summary
DESCRIPTION:The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies
Parametrics
Maximum Collector Emitter Voltage:600 V
Maximum DC Collector Current:3 A
Minimum DC Current Gain :16@350mA@3V|12@10mA @5V
Maximum Collector Emitter Saturation Voltage :0.5@0.1A@0.5A|0.9@0 .2A@1A V
Maximum Collector Base Voltage:1300 V
Operating Temperature:-65 to 150 °C
Maximum Power Dissipation:60000 mW
Features
SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125℃
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BUL213 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
BUL213 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw |
Data Sheet |
Negotiable |
|
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|
BUL216 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw |
Data Sheet |
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