Product Summary

DESCRIPTION:The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch
applications

Parametrics

ABSOLUTE MAXIMUM RATINGS
VDS Drain-source Voltage (VGS = 0) 700 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 700 V
VGS Gate- source Voltage ± 25 V
ID Drain Current (continuos) at TC = 25°C 2.3 A
ID Drain Current (continuos) at TC = 100°C 1.45 A
IDM (l) Drain Current (pulsed) 9.2 A
PTOT Total Dissipation at TC = 25°C 55 W
Derating Factor 0.44 W/°C
IGS Gate-source Current (DC) ±50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1.5 KV
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
Tstg Storage Temperature –65 to 150 °C
Tj Max. Operating Junction Temperature 150  °C

Features

(1) TYPICAL RDS(on) = 4.1Ω; 
(2) EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES; 
(3) 100% AVALANCHE TESTED; 
(4) VERY LOW GATE INPUT RESISTANCE; 
(5) GATE CHARGE MINIMIZED

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STD2NC70Z-1
STD2NC70Z-1
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STD20
STD20
Cooper Bussmann
Fuses 20A 240VAC IND
Data Sheet
0-1: $4.99
1-10: $4.76
10-100: $4.54
100-250: $4.30
STD200D
STD200D
Littelfuse
PTC Resettable Fuses -
Data Sheet
Negotiable 
STD20NE06
STD20NE06
STMicroelectronics
MOSFET RO 511-STD20NF06 511BCY79IX
Data Sheet
Negotiable 
STD20NE06T4
STD20NE06T4
STMicroelectronics
MOSFET N-CH 60V 20A
Data Sheet
Negotiable 
STD20NF20
STD20NF20
STMicroelectronics
MOSFET Low charge STripFET
Data Sheet
0-1: $1.12
1-10: $0.91
10-100: $0.73
100-250: $0.70
STD20NF06LT4
STD20NF06LT4
STMicroelectronics
MOSFET N-CH 60V 0.032 Ohm 24A STripFET II
Data Sheet
0-1: $0.65
1-10: $0.52
10-100: $0.45
100-250: $0.40