Product Summary
Description
Thrid Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching,
ruggedized device design ,low on-resistance and cost-effectibeness .
The TOP=220 package is universalty preferred for all commerial-industrial application at power dissipation levels to
approximately 50 watts .The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Parametrics
Absolute Maximum Ratings
Vgs Gate-to-source voltage :±20V
Eas Single Pulse Avalanche Energy 280mJ
Iar Avalanche Current 4.5A
Features
HEXFET POWER MOSFET
(1)Dynamic dv/dt Rating;
(2)Repetitive Avalanche Rated;
(3)Fast Switching;
(4)Ease of Paralleing;
(5)Simple Drive Requirements ;
(6)Lead-Free
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![]() IRF830PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 4.5 Amp |
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![]() IRF8010 |
![]() Other |
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![]() Negotiable |
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![]() IRF8010LPBF |
![]() International Rectifier |
![]() MOSFET N-CH 100V 80A TO-262-3 |
![]() Data Sheet |
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![]() IRF8010PBF |
![]() International Rectifier |
![]() MOSFET MOSFT 100V 80A 15mOhm 81nC |
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![]() IRF8010S |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRF8010SPBF |
![]() International Rectifier |
![]() MOSFET |
![]() Data Sheet |
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![]() IRF8010STRLPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 100V 80A 15mOhm 81nC |
![]() Data Sheet |
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