(China (Mainland))
Product Summary
Feature
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
? Improved transconductance
? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute）
Parametrics
Maximum Rating
Continuous drain current
ID TC = 25 °C 11 111) A
ID TC = 100 °C 7 71) A
Pulsed drain current, tp limited by Tjmax ID puls 33 33 A
Avalanche energy, single pulse ID=5.5A, VDD=50V EAS 340 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax 2) ID=11A, VDD=50V EAR 0.6 0.6
Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A
Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 125 33 W
Operating and storage temperature Tj, Tstg -55...+150℃
Features
Feature
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
? Improved transconductance
? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute）
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SPA11N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 11A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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SPA11N60C3 |
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SPA11N60CFD |
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SPA11N65C3 |
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MOSFET COOL MOS PWR TRANS 650V 11A |
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