(China (Mainland))
Product Summary
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection
Parametrics
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current (Fig. 1) IF(AV) 30 A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 A
Isolation voltage (ITO-220AB only)From terminal to heatsink t = 1 min VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C
Features
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Low thermal resistance
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB,and TO-262AA package)
? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 V30100S-E3/45 |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 30 Amp 100 Volt Single TrenchMOS |
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
V30100C |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
V30100P |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
V30100P-E3/45 |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 30 Amp 100 Volt Dual TrenchMOS |
Data Sheet |
Negotiable |
|
||||||||||||
|
V30100PW-M3/4W |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 30Amp 100volts Dual TrenchMOS |
Data Sheet |
|
|
||||||||||||
|
V30100S |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
V30100S-E3/45 |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 30 Amp 100 Volt Single TrenchMOS |
Data Sheet |
Negotiable |
|
||||||||||||
